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Fujitsu Limited
Singapore, 2 June 2003 — Fujitsu Limited today announced the development of a new memory product for next-generation mobile phones and other high-performance mobile applications, the MB84SR6H5K5K1, a multi-chip package (MCP) combining Mobile Fast Cycle RAM (FCRAM*1) and burst mode(*2) flash memory. Fujitsu is shipping samples of the new chip package starting today.
The new multi-chip package includes one 128 Mbit (Mb) NOR-type flash memory and two 64 Mb Mobile FCRAM chips compliant with the Common Specification for Mobile RAM (COSMORAM*3). Both memory units are capable of burst-mode operation at 66 MHz, enabling high-speed data access. Moreover, the new MCP is a low-voltage device, requiring only 1.8V of power.
The product is designed especially for use in 3G mobile phones, where the burst mode operation will deliver the high-speed data transfer rates essential for sending and playback of streaming video and other multimedia functions.
Fujitsu plans to extend this line to suit diverse customer needs, adding a model with 64 Mb flash memory and 32 Mb Mobile FCRAM, and increasing burst frequencies to 80 MHz and even 100 MHz.
1. Fast access times
2. Low power consumption
3. Pin layout shared by all three COSMORAM-developing companies
| Flash memory | Mobile FCRAM | |
| Packaging | 9 x 12 x 1.4 mm 115-pin FBGACOSMORAM-compliant burst-MCP pin layout | |
| Density | 128 Mb | 64 Mb (x 2) |
| I/O configuration | x16 | x16 |
| Operating voltage | 1.65 to 1.95V | 1.65 to 1.95V |
| Operating temperature | -30 to +85°C | -30 to +85°C |
| Burst frequency | 66 MHz | 66 MHz |
| Burst access time (max) | 11 ns | 12 ns |
| Address access time (max) | 56 ns | 70 ns |
| Page access time (max) | - | 20 ns |
| Active current (max) | 30 mA | 30 mA |
| Standby current (max) | 10 µA | 120 µA (per chip) |
| Power-down current (max) | - | 10 µA (per chip) |
| Erase/rewrite cycles (min) | 100,000 | - |
*1. Mobile FCRAM (fast-cycle RAM
FCRAM is an advanced memory core design, proprietary to Fujitsu, with low power consumption and fast operation. Mobile FCRAM is a pseudo-SRAM technology that couples an FCRAM core to an SRAM interface
*2. Burst mode
A special mode of operation for memory enabling fast, continuous reads synchronized to the system clock, so that a large amount of information can be read in a large block, simply by specifying one partial address. FCRAM adds the ability to perform write operations in burst mode as well.
*3. Common Specification for Mobile RAM (COSMORAM)
A specification developed jointly by Fujitsu Limited, NEC Electronics Corp. and Toshiba Corp., and announced on February 17, 2003. Refers to a standard for burst mode pseudo-SRAM chips and MCPs containing these chips.
Product name : MB84SR6H5K5K1
Price : ¥15,000 in Japan (excl tax)
Available : beginning June 2, 2003
Sales target : 1 million units/month
Fujitsu is a leading provider of customer-focused IT and communications solutions for the global marketplace. Pace-setting technologies, highly reliable computing and telecommunications platforms, and a worldwide corps of systems and services experts uniquely position Fujitsu to deliver comprehensive solutions that open up infinite possibilities for its customers' success. Headquartered in Tokyo, Fujitsu Limited (TSE:6702) reported consolidated revenues of 4.6 trillion yen (US$38 billion) for the fiscal year ended March 31, 2003.
For more information, please see: www.fujitsu.com
Electronic Devices
LSI Group, System Memory Division
Technology & System Application Enabling Department
Tel: +81-42-532-1399 (direct)
E-mail:edevice@fujitsu.com
| *All product names and company names mentioned herein are the trademarks or registered trademarks of their respective firms. |
FCRAM is a registered trademark of Fujitsu Limited.
All other product names and company names mentioned herein are the trademarks or registered trademarks of their respective firms.