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December 2004

16 December 2004  Singapore

Fujitsu Introduces World First 1MBit Class Ferroelectric Random Access Memory

Singapore, December 16, 2004 – Fujitsu Microelectronics Asia Pte Ltd today introduces and is sampling its 1MBit ferroelectric random access memory (FRAM), the largest-ever capacity for FRAM non-volatile memory that offers high-speed read and write operations, low power consumption and high endurance.