Leading-edge 90-nanometer LSI technology
Transistor for ultra-high performance MPU
To achieve the world's fastest MPU, FUJITSU has developed 90nm fabrication technology to produce THz (terahertz) transistors
with gate lengths of just 40nm.
This length is equivalent to less than 1/2500 of the diameter of a human hair.
These transistors have switching speeds of one trillion times per second.
10-layer very-low-k/Cu interconnect
For high-speed / low-power LSI devices, FUJITSU has developed 10-layer interconnects using low resistivity Cu metallization
and the lowest wiring capacitance achievable. FUJITSU is the first in the world to utilize very-low-k ILD (Inter-Level Dielectric)
materials for 90nm integration, yielding extremely low effective dielectric constants. This allows the development of very
high speed interconnects with superb reliability, capable of handling currents of more than one million amperes per square
centimeter.
High performance photoresist technology for ArF lithography
FUJITSU has developed a novel high resolution photoresist material for ArF (wavelength 193nm) lithography and a 90nm patterning process using phase-shift masking and etching.Since FUJITSU's original ArF photoresist technology is essential for 90nm fabrication, it has become the de facto standard in ArF lithography.
