FRAM
Products
- Lineup
- Technical explanations
- Quality & Reliability
Documentation
- Catalog
- Guide book
FRAM (Ferroelectric Random Access Memory) is a "non-volatile" "random access" memory, which uses ferroelectric film
as a capacitor for storing data.
(Fujitsu utilizes PZT as ferroelectric material)
Combining the advantages of both ROM and RAM devices, FRAM can achieve high-speed read/write and also retain data even after
the power is turned off.
Following are the advantages of FRAM:
♦High-speed writing (1/30,000 of E2PROM)
♦High endurance (1E10 times)
♦Low power consumption (1/400 of E2PROM)
♦Non-volatility
♦Excellent tamper prevention
Semiconductor memory classification

Memory Types by density and endurance

PZT Crystal Structure

FRAM
FRAM is best suited for devices, which require high security and low power consumption. Fujitsu was the first to incorporate FRAM in microcomputers and has already expanded its use to smart cards, security devices, RFID transponders etc.
Smart card
Utilizing the advantages of "High-speed read/write" and "High-security," FRAM is fit for smart cards, especially for Java cards. The current inhibitors for Java cards' wide use is the low speed of non-volatile memory and smart card I/O. Solving these two problems, FRAM is regarded as the most matching technology for non-volatile memory on smart cards.
BBSRAM Substitute
BBSRAM consists of an SRAM and a battery. With two components, BBSRAM is fairly expensive, and also using batteries is not environmentally friendly.
FRAM is a perfect solution for both problems. Since FRAM doesn't need a battery, it can replace both components, the SRAM and the battery. This will bring the user three benefits; lower cost, maintenance free, and environmentally friendly.
RF-ID
FRAM RF-ID chip can provide the following advantages, which could not be provided by commonly used EEPROM based RF-ID chip.
Range
Low power consumption can improve the operating range.
The power delivered to the load must provide certain threshold voltage and power for the circuits to function. Because of
the low power consumption nature of FRAM, the operating range could be improved within given field strength or power density.
Speed
Speed and range are coupled.
Given the bandwidth limitations and anti-collision schemes, low power consumption tag offer better data rate in exchange of
speed of identification. FRAM is best fit for this purpose.
Cost
Process advantage.
FRAM has process advantage without much investment comparing with other memory to shrink the die size further, also with full-line
of memory size.
Almost unlimited read-write times
With read-write endurance of 1E10, FRAM is more durable and suitable for applications, which requires frequent write.
Lineup
The range of our FRAM based products can be categorized in the following areas. The products shown here is just a part of our product line-up. For products descriptions, data sheets and any further information, please contact our sales office.
Stand-alone FRAM
| Part No. | Application bit | Organization W x b |
Interface | Access Time (Max.) |
Clock Speed (Max.) |
Supply Voltage | Operating Temperature Range | Documentation |
|---|---|---|---|---|---|---|---|---|
| MB85R256 | 256K | 32K x 8 | Parallel | 150ns | - | 3.0 to 3.6V | -40 ~85℃ | PDF Datasheet |
| MB85R256H | 256K | 32K x 8 | Parallel | 70ns | - | 2.7 to 3.6V | -40 ~85℃ | PDF Datasheet |
| MB85RS256 | 256K | 32K x 8 | SPI* | - | 15MHz | 3.0 to 3.6V | -20~85℃ | PDF Datasheet |
| MB85R1001 | 1M | 128K x 8 | Parallel | 100ns | - | 3.0 to 3.6V | -20~85℃ | PDF Datasheet |
| MB85R1002 | 1M | 64K x 16 | Parallel | 100ns | - | 3.0 to 3.6V | -20~85℃ | PDF Datasheet |
| MB85R2001 | 2M | 256K x 8 | Parallel | 100ns | - | 3.0 to 3.6V | -20~85℃ | PDF Datasheet |
| MB85R2002 | 2M | 128K x 16 | Parallel | 100ns | - | 3.0 to 3.6V | -20~85℃ | PDF Datasheet |
*SPI: Serial Peripheral Interface
FRAM embedded ASSP
Memory LSI for EDID
| Part No. | FRAM | I/F | Documentation |
|---|---|---|---|
| MB85RF402 | 2Kbit | DDC(I2C) 4-channel | PDF Datasheet |
RFID Transponder LSI (FerVID FamilyTM)
| Part No. | Frequency band | FRAM | I/F | Documentation |
|---|---|---|---|---|
| MB89R111* | 13.56MHz | 2KB | Contactless(ISO 14443TypeB) | - |
| MB89R118 | 13.56MHz | 2KB | Contactless(ISO 15693) | PDF Datasheet |
| MB89R119 | 13.56MHz | 256B | Contactless(ISO 15693) | PDF Datasheet |
| MB97R8010* | UHF | 1KB | Contactless(ISO 18000-6 TypeB) | - |
| MB97R8020* | UHF | 256B | Contactless(ISO 18000-6 TypeB) | - |
*: for Japan only
Smart Card LSI(8bit)
| Part No. | CPU | FRAM | ROM | RAM | Encryption | I/F | Documentation |
|---|---|---|---|---|---|---|---|
| MB89R076* | 8bit | 4KB | 32KB | 512B | DES | Contactless(ISO 14443 TypeB) | PDF Hardware Manual |
*: for Japan only
Smart Card LSI(32bit)HIFERRONTM Series
| Part No. | CPU | FRAM | ROM | RAM | Encryption | I/F | Documentation |
|---|---|---|---|---|---|---|---|
| MB94R215B* | 32bit | 32KB | 128KB | 8KB | DES, RSA | Combi (ISO 7816,ISO 14443 TypeB) |
PDF Datasheet |
*: for Japan only
Security LSI
| Part No. | CPU | FRAM | ROM | RAM | Encryption | I/F | Documentation |
|---|---|---|---|---|---|---|---|
| MB89R907A | 8bit | 4KB | 32KB | 1KB | ECC | - | PDF Hardware Manual |
