Fujitsu The Possibilities are Infinite

Low Power Consumption Memory for SiP (x64, Low Power DDR SDRAM) 256M-bit Consumer FCRAM

Wafer Level Package of MB81EDS256545

Wafer Level Package of MB81EDS256545

Introduction

Fujitsu provides a new 256M-bit Consumer FCRAM product optimized for a SiP(System in Package) design, featuring low power consumption for digital consumer electronics.
This FCRAM offers the best solution for memory embedded in various digital consumer electronics in term of system value and cost instead of using DDR SDRAM.


Applications for Consumer FCRAM

Applications for Consumer FCRAM

Applications

Digital Consumer Electronics

  • Digital TV
  • Digital Still Camera
  • Digital Video Camera
  • Set Top Box
  • Portable Media Player (PMP)
Customer's Applications and Requirements for Memory

Features

The Consumer FCRAM features low power consumption and high performance which are essential to electronic components for digital consumer electronics.

With a 64-bit I/O and CMOS Low Power DDR SDRAM interface, this FCRAM is capable of a maximum 3.46GByte/s of high-speed data transfer performance while keeping low power consumption.

An SiP solution using the FCRAM provides the advantages of simplified board design and reduced costs.

Low Power Consumption

  • Enables greater reduction of power consumption than using two(2) DDR2 SDRAMs because no termination resistors (on board or ODT:On Die Termination) are necessary. (The termination resistors are needed for high speed memory like DDR2 SDRAM to avoid distortion of signals caused by reflections.)
  • Using one(1) FCRAM reduces power consumption by a maximum of approx. 1W (by 70%), compared with the equivalent operation using two(2) DDR2 SDRAMs.

High-Speed Data Transfer Rate

  • Capable of max. 3.46GByte/s of data transfer performance with 64-bit I/O and max. operating frequency of 216MHz, double the speed of typical DDR2 SDRAMs (x16, 400MHz).
Benefits of using new FCRAM with SiP

Benefits of using new FCRAM with SiP

SiP-optimized memory design

  • SiP-optimized design: pad assignment suited for chip stacking and low power consumption with CMOS interfaces.

Main specifications

Part Number MB81EDS256545
Organization 1M-word x 64-bit x 4-bank
Interface Low Power DDR
Supply Voltage 1.7V to 1.95V
Burst Operating Frequency 216MHz (Max.)
Data Transfer Rate 3.46GByte/s (Max.)
Clock Access Time 4.6ns (Max.)
Operating Current (Burst Read) 300mA (Max.)
Deep Power Down Current 20uA (Max.)

Technical support

Fujitsu offers the technical support tools such as Simulation Models for memory verification, Memory Controller for interface support, and FPGA optional evaluation board, to help customer's product development.
Please contact us with the "FCRAM Inquiry Form” button below, if you would like further information.

FPGA Optional Evaluation Board

Larger View

  • Data Sheet
  • Memory Controller
  • FPGA Evaluation Board (Optional Board)
  • Simulation Model
    • IBIS Model
    • Verilog Model
    • SOMA Model (Supported by Denali Software, Inc.)
    • BFM (Bus Function Model)
    • ESL (Electric System Level)

256M-bit Consumer FCRAM Family

In addition to the above mentioned 256M-bit Consumer FCRAM with 64-bit I/O and Low Power DDR interface, Fujitsu offers other FCRAM products with combinations of 32-bit/64-bit I/O and Low Power SDR/DDR interfaces as follows.

Density (Bit) Interface I/O (bit) Supply Voltage (V) Operating Frequency
(MHz)
Junction Temp.
Tj (ºC)
Part Number
256M SDR x 32 1.7 to 1.95 166 -10 to +105 MB81ES253245
x 64 1.7 to 1.95 166 -10 to +105 MB81ES256445
DDR x 32 1.7 to 1.95 216 -10 to +105 MB81EDS253245
x 64 1.7 to 1.95 216 -10 to +105 MB81EDS256445
MB81EDS256545*

*: with special function


Press release

FCRAM Inquiry Form
Please click on the inquiry form button below if you have any FCRAM questions. Such as;
How long is the leadtime of samples?
Is a data sheet available?
Want a simulation model.
What kind of technical support is available?
Who can I talk with about FCRAM?
Any general questions on FCRAM.
Inquiry Form