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Low Power Consumption Memory for Digital Consumer Electronics
(x64, Low Power DDR SDRAM, SiP-optimized)
256M-bit Consumer FCRAM
Introduction
256Mbit Consumer FCRAM is suitable memory for SiP, featuring 125°C operation, low power consumption and high data bandwidth. This FCRAM enables integration of high speed memory with SoC in single package, and offers the best value and cost solution for memory system of digital consumer electronics.
Features
256Mbit Consumer FCRAM have features of 125°C operation, low power consumption and high data bandwidth. External memory with high data bandwidth can be integrated together with high power SoC in single package (SiP). The FCRAM is the industry first memory product to support 125°C, which contributes expanding the SiP territory to a variety of digital consumer products.
Maximum 125ºC Operation
- Conventional SDRAM such as DDR2 SDRAM or Low Power DDR SDRAM can support operating temperature of maximum 95°C. 95°C is not enough high to be integrated with SoC with high power consumption because of thermal design problem. Since this FCRAM with max. 125°C operation can solve the thermal design problem, SiP can be used for variety of applications.
Case Study of SiP Thermal Design (54KB)
Low Power Consumption
- Wide data bus width of 64-bit I/O realizes higher data bandwidth at a lower operating frequency without termination resistors. Therefore, compared to equivalent DDR2 SDRAM with termination resistors, this FCRAM solution can greatly reduce power consumption.
- Since a 256Mbit FCRAM has high data transfer performance that corresponds to double of DDR2 SDRAM or Low Power DDR SDRAM, single chip operation can be effective compared to two chip operation therefore FCRAM can save power consumption than standard SDRAMs when more than 1.6GByte/s(12.8Gbps) of data bandwidth is required.
Power Consumption Comparison between DDR2/LPDDR and FCRAM (46KB)
High Data Bandwidth
- x64-bit I/O FCRAM realizes high data transfer rate as twice as that of standard DDR memories.
- Operating frequencies up to 216MHz under 105°C, and 200MHz under 125°C.
Feature Comparison between Standard DRAM and FCRAM (41KB)
Main Specifications
| Part Number | MB81EDS256545 | |
|---|---|---|
| Organization | 1M-word x 64-bit x 4-bank | |
| Interface | Low Power DDR | |
| Supply Voltage | 1.7V to 1.95V | |
| Operating Voltage (Tj) | -10°C to +125°C | |
| Burst Operating Frequency | Tj≦105°C | 216MHz (Max.) |
| Tj≦125°C | 200MHz (Max.) | |
| Data Transfer Rate | Tj≦105°C | 3.46GByte/s (Max.) |
| Tj≦125°C | 3.2GByte/s (Max.) | |
Technical Information
Fujitsu offers Simulation Models for logic verification and signal integrity (SI) check. In addition, the customers can get technical information on Spec Comparison and Power Supply Design.
Please contact us with the "FCRAM Inquiry Form" button below, if you would like further information.
Simulation Model
- IBIS Model
- Verilog Model
- SOMA Model (Supported by Denali Software, Inc.)
- BFM (Bus Function Model)
- ESL (Electric System Level)
Link
| FCRAM Requests & Inquiry Form |
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