CMOS Standard Technologies
The main characteristics of our standard CMOS technologies are outlined below. Please feel free to inquire about other technologies not listed in the table.
| Technology | 0.13 µm | 0.18 µm | 0.25 µm | 0.35 µm | 0.50 µm | |
|---|---|---|---|---|---|---|
| *1: "2P6M" means Poly 2 Layers + Metal 6 Layers. *2: Please contact us, before using the 0.50um technology at 5 V. *3: No limitation in the combination of Mixed-Signal Option. |
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| Supply Voltage (V) | 1.2 | 1.8 | 2.5 | 3.3 | 3.3*2 | |
| Available Interface (V) | 1.2/2.5/3.3 | 1.8/3.3/5.0 | 2.5/3.3/5.0 | 3.3/5.0 | 3.3/5.0 | |
| Available Poly/Metal Layers | 1P8M | 2P6M*1 | 2P5M | 2P4M | 2P4M | |
| Substrate | P-sub | P-sub | P-sub | P-sub | P-sub | |
| Mixed-Signal Options*3 | Triple-well | Yes | Yes | Yes | Yes | No |
| Diffusion Resistor | Yes | Yes | Yes | Yes | Yes | |
| Capacitor | MIM&Bulk-Poly | Poly-Poly&Bulk-Poly&MIM | Poly-Poly | Poly-Poly&Bulk-Poly | Bulk-Poly | |
| Mass Production Availability | Now | Now | Now | Now | Now | |
