CMOS High-voltage
FUJITSU offers CMOS High-voltage technologies for a variety of drivers (LCD, Organic EL, etc.).
The main characteristics of our CMOS High-voltage technologies are outlined below.
| Technology | 0.18 µm | 0.25 µm | 0.35 µm | 0.65 µm |
|---|---|---|---|---|
| The "Capacitor" and "Resistor" items are options. | ||||
| *: One Time Programmable(OTP) memory option. | ||||
| Wafer Size | 8inch | 8inch | 8inch | 6inch |
| Logic Voltage (V) | 1.8/(3.3or5.0) | 2.5 | 3.3 | 5.0 |
| High-voltage (V) | 12V 18V 25V 32V |
12V 18V 25V 32V |
12V 18V 25V 32V |
32V |
| Available Poly/Metal Layers | 2P6M | 2P5M | 1P4M | 1P2M |
| Capacitor | Poly-Poly/Metal-Metal | Poly-Poly | Bulk-Poly | Bulk-Poly |
| Resistor | Diffusion/Poly resistor | Diffusion/Poly resistor | Diffusion | Diffusion |
| Well | Triple Well | Twin Well | Twin Well | Twin Well |
| OTP* | Yes | No | No | No |
| Document Available | Now (18V) Sep 07 (12/25V) Dec 07 (32V) |
Now | Now | Now |
| Data Acceptable | Now (18V) Oct 07 (12V) Nov 07 (25V) Jan 07 (32V) |
Now | Now | Now |
