Most Recent News

3 February 2010  Singapore

The Fujitsu USB 3.0-SATA Bridge IC Earns USB-IF ComplianceCertification for SuperSpeed USB

Singapore, February 3, 2010 – Fujitsu Microelectronics Asia Pte Ltd (FMAL) today announced that its USB 3.0-SATA bridge IC has been certified as compliant with the USB 3.0 standard by the USB Implementers Forum, Inc.

25 January 2010  The Netherlands

Wireless modules

Hoofddorp, January 25, 2010 – New wireless modules broaden the Fujitsu Components Europe B.V. product range. The wireless module product range, including WLAN, Bluetooth, and GPS solutions, has recently been taken over from Fujitsu Media Devices and will soon make its way onto the European market.

19 January 2010  Japan and Singapore

Fujitsu and A*STAR's IHPC Enter Collaborative R&D Partnership To Usher in Era of Petascale Computing in Singapore

Tokyo and Singapore, January 19, 2010 – Fujitsu and the Agency for Science Technology and Research (A*STAR)'s Institute of High Performance Computing (IHPC) announced today an R&D partnership to jointly develop advanced applications technologies for the next generation of scientific computing known as petascale computing.

6 January 2010  USA

Fujitsu Microelectronics to Demonstrate the Interoperability of MB86C30 USB 3.0-SATA Bridge IC at USB TechZone #30769 during 2010 CES

Sunnyvale, Calif. , January 6, 2010 – Fujitsu Microelectronics to Demonstrate the Interoperability of MB86C30 USB 3.0-SATA Bridge IC at USB TechZone #30769 during 2010 CES

6 January 2010  USA

The Fujitsu USB 3.0-SATA Bridge IC Earns USB-IF Compliance Certification for SuperSpeed USB

Sunnyvale, Calif. , January 6, 2010 – The Fujitsu USB 3.0-SATA Bridge IC Earns USB-IF Compliance Certification for SuperSpeed USB

5 January 2010  USA

The Fujitsu USB 3.0-SATA Bridge IC Named Product of the Year by Electronic Products Magazine

Sunnyvale, Calif. , January 5, 2010 – The Fujitsu USB 3.0-SATA Bridge IC Named Product of the Year by Electronic Products Magazine

11 December 2009  Japan

Fujitsu Succeeds in World's First Operation of 100W-Class Amplifiers Employing Carbon Nanotubes for Next-Generation Mobile Base Stations

Kawasaki, Japan, December 11, 2009 – Fujitsu Laboratories Ltd. today announced that, using carbon nanotubes as heat-dissipation material in amplifier transistors, Fujitsu has become the first to achieve the successful operation of high-frequency, high-power (100W-class) flip-chip amplifiers employing carbon nanotubes, for mobile base stations designed for fourth-generation (4G, IMT-Advanced) systems. Fujitsu achieved high frequency, high output, and high amplification in the amplifiers by developing "dual-side heat-dissipation" technology, in which heat is dissipated through both sides of the transistor chip, which is the source of the amplifier's heat output. Furthermore, Fujitsu's new technology enables the reduction of the transistor chip size to less than two-thirds (2/3) the size of existing transistor chips. Details of this new technology were presented at the IEEE International Symposium on Radio-Frequency Integration Technology 2009 (RFIT 2009) held from December 9 to 11 in Singapore, at which Fujitsu Laboratories was awarded the RFIT 2009 Best Paper for Oral Presentation award.

3 December 2009  The Netherlands

24V driven receipt/journal printer

Hoofddorp, December 3, 2009 – Fujitsu Components Europe releases two new ultra low profile, 24V, receipt and journal printer units that can either be combined together into one modular unit, or mounted separately for design and installation flexibility.

27 November 2009  Japan

Fujitsu Develops World's First Technology for Low-Temperature Full-Surface Direct Formation of Graphene Transistors on Large-Scale Substrates

Kawasaki, Japan, November 27, 2009 – Fujitsu Laboratories Ltd. today announced, as a world first, the development of a novel technology for forming graphene transistors directly on the entire surface of large-scale insulating substrates at low temperatures while employing chemical-vapor deposition (CVD) techniques which are in widespread use in semiconductor manufacturing. Compared to the temperatures of 800-1000°C at which graphene is formed with conventional methods, Fujitsu has succeeded in significantly lowering the graphene fabrication-temperature to 650 °C, thus allowing for graphene transistors to be formed directly on a variety of insulator substrates, including substrates that are sensitive to the higher temperatures. Graphene is a nano-scale carbon material (nano-carbon) with the potential to be the material used in next-generation low-voltage, low-power transistors, as graphene features high-electron and hole mobility characteristics.

19 November 2009  USA

Symmetry Electronics and Fujitsu Microelectronics America Announce New Distribution Agreement for the Americas

Hawthorne and Sunnyvale, Calif., November 19, 2009 – Symmetry Electronics and Fujitsu Microelectronics America Announce New Distribution Agreement for the Americas

17 November 2009  Singapore

Fujitsu Announces Fast-Response DC/DC Converter IC for Consumer Electronics

Singapore, November 17, 2009 – Fujitsu Microelectronics Asia Pte Ltd (FMAL) today announced a new two-channel DC/DC converter IC with fast transient response, for use in digital consumer products, such as LCD TVs and digital video recorders. This new DC/DC converter IC, the MB39A145, utilizes a “bottom detection comparator method”, and includes new enhanced circuits which provide changes in voltage, for changes in current to realize a more stable and low ripple output voltage.

16 November 2009  Japan

Fujitsu Announces Fast-Response DC/DC Converter IC for Consumer Electronics

Tokyo, November 16, 2009 – Fujitsu Microelectronics Limited today announced a new two-channel DC/DC converter IC with fast transient response, for use in digital consumer products, such as LCD TVs and digital video recorders. This new DC/DC converter IC, the MB39A145, utilizes a “bottom detection comparator method”, and includes new enhanced circuits which provide changes in voltage, for changes in current to realize a more stable and low ripple output voltage. This improved stability subsequently reduces the number of external components that are needed, such as condensers, thus reducing space. The IC also includes Pulse Frequency Modulation (PFM) that is highly efficient in low-current ranges, and allows the equipment to have low power consumption in stand-by mode. Samples of the new converter IC will be available from January 2010.

30 September 2009  Japan

Fujitsu Develops World's First Millimeter-Wave Gallium-Nitride Transceiver Amplifier Chipset

Tokyo and Kawasaki, September 30, 2009 – Fujitsu Limited and Fujitsu Laboratories Ltd. announced today the development of the world's first gallium-nitride (GaN) HEMT-based transceiver amplifier chipset for broadband wireless transmission equipment operating in the millimeter bandwidth, the range of 70 to 100 GHz, for which widespread usage is expected to grow.

16 September 2009  Singapore

Fujitsu Launches Multimode, Multiband RF Transceiver IC

Singapore, September 16, 2009 – Fujitsu Microelectronics Asia Pte Ltd (FMAL) today announced the first product in its entry into the mobile phone RF transceiver market, in launching a RF transceiver IC for mobile phones supporting 2G GSM/GPS/EDGE and 3G UMTS/HSPA protocols, that includes a 3G DigRF(*1) interface on a single chip.

14 September 2009  USA

Fujitsu Microelectronics Now Shipping Industry’s First 3G SAW-less Transceiver: a New Multimode, Multiband UMTS/ GPRS/EDGE Solution

Sunnyvale, Calif. , September 14, 2009 – Fujitsu Microelectronics Now Shipping Industry’s First 3G SAW-less Transceiver: a New Multimode, Multiband UMTS/ GPRS/EDGE Solution

14 September 2009  Japan

Fujitsu Launches Multimode, Multiband RF Transceiver IC

Tokyo, September 14, 2009 – Fujitsu Microelectronics Limited today announced the first product in its entry into the mobile phone RF transceiver market, in launching a RF transceiver IC for mobile phones supporting 2G GSM/GPS/EDGE and 3G UMTS/HSPA protocols, that includes a 3G DigRF interface on a single chip. The compact new transceiver IC also eliminates the need for external SAW filters and low-noise amplifiers (LNA), and enables mobile phone manufacturers to reduce component count, board space and bill of materials. Additionally, a new simplified programming model helps to significantly reduce development time and simplify integration of the RF into a radio platform. Samples of the MB86L01A transceiver IC are available from today.

27 August 2009

Fujitsu Microelectronics and TSMC to Collaborate on 28nm Process Technology

Tokyo and Hsin-chu, Taiwan, August 27, 2009 – Fujitsu Microelectronics Limited and Taiwan Semiconductor Manufacturing Company, Ltd. (TWSE: 2330, NYSE: TSM) today announced that they have agreed to collaborate on 28-nanometer (nm) process technology targeted for foundry production of Fujitsu Microelectronics’ 28nm logic ICs and to jointly develop an enhanced 28nm high-performance process technology by utilizing TSMC’s advanced technology platform.

27 August 2009  Japan and Taiwan

Fujitsu Microelectronics and TSMC to Collaborate on 28nm Process Technology

Tokyo and Hsin-chu, Taiwan , August 27, 2009 – Fujitsu Microelectronics Limited and Taiwan Semiconductor Manufacturing Company, Ltd. (TWSE: 2330, NYSE: TSM) today announced that they have agreed to collaborate on 28-nanometer (nm) process technology targeted for foundry production of Fujitsu Microelectronics’ 28nm logic ICs and to jointly develop an enhanced 28nm high-performance process technology by utilizing TSMC’s advanced technology platform. Previously, both companies announced that Fujitsu Microelectronics will collaborate with TSMC on 40nm production. This will extend Fujitsu Microelectronics’ 40nm collaboration with TSMC and covers joint development of an optimized 28nm high-performance process technology. Initial 28nm samples are expected to ship toward the end of 2010.

27 July 2009  USA

Fujitsu Now Shipping USB 3.0-SATA Bridge IC for PC Peripherals Supporting SuperSpeed USB 3.0

Sunnyvale, Calif. , July 27, 2009 – Fujitsu Now Shipping USB 3.0-SATA Bridge IC for PC Peripherals Supporting SuperSpeed USB 3.0

27 July 2009  Singapore

Fujitsu Releases New USB 3.0 - SATA Bridge IC for PC Peripherals

Singapore, July 27, 2009 – Fujitsu Microelectronics Asia Pte Ltd (FMAL) today announced the new USB 3.0 - SATA (*1) bridge (*2) ICs, built with Fujitsu’s leading-edge proprietary physical layer device (PHY). It supports SuperSpeed USB, the USB 3.0 specification (*3), and enables data transfer rates of 5Gbps maximum between external storage devices – such as hard disk drives (HDDs) – and PCs.