ReRAM: Resistive random access memory.
A form of non-volatile memory in which a pulse voltage is applied to a metal oxide thin film, creating massive changes in resistance to record ones and zeros.
With a simple structure of metal oxide placed between electrodes, the manufacturing process is very simple, while still offering such excellent features as low power consumption and fast write.
Featuring memory with the industry's lowest read current, optimal for wearable devices and hearing aids.
It is optimal for battery operated wearable devices and medical devices such as hearing aids, which require high density, low power consumption electronic components.
Since MB85AS4MT features an extremely small average current in read operations of 0.2mA , it is optimal for applications that frequently read-out the programs stored in memory.
The package is a 209mil 8 pin small outline package (SOP), pin-compatible with other non-volatile memory products such as EEPROM.
And Interface is SPI. It conforms to SPI communication standard.
Wafer fab of ReRAM products is that of Panasonic Semiconductor Solutions Co., Ltd in Japan.
Panasonic Semiconductor Solutions Co. has experience the production of ReRAM embedded microcomputer in 2013.
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