ReRAM (Resistive Random Access Memory)

ReRAM Overview

ReRAM: Resistive random access memory.
A form of non-volatile memory in which a pulse voltage is applied to a metal oxide thin film, creating massive changes in resistance to record ones and zeros.
With a simple structure of metal oxide placed between electrodes, the manufacturing process is very simple, while still offering such excellent features as low power consumption and fast write.
Featuring memory with the industry's lowest read current, optimal for wearable devices and hearing aids.

ReRAM Applications

Remarkable Products

• SPI Interface: ［NEW］4 Mbit ReRAM "MB85AS4MT"

ReRAM Product

Part Number ( Datasheet)	Memory Density	Power Supply Voltage	Operating Freq.	Operating Temp.	Read current	Read cycle	Package
MB85AS4MT ENG (939 KB)	4Mbit	1.65 to 3.6V	5MHz	-40 to +85℃	0.2mA	Unlimited	SOP-8

* The MB85AS4MT is an SPI-interface.

Global Contacts

Global Contacts

Share this page