ReRAM: Resistive random access memory.
A form of non-volatile memory in which a pulse voltage is applied to a metal oxide thin film, creating massive changes in resistance to record ones and zeros.
With a simple structure of metal oxide placed between electrodes, the manufacturing process is very simple, while still offering such excellent features as low power consumption and fast write.
Featuring memory with the industry's lowest read current, optimal for wearable devices and hearing aids.
ENG (939 KB)
|4Mbit||1.65 to 3.6V||5MHz||-40 to +85℃||0.2mA||Unlimited||SOP-8|
* The MB85AS4MT is an SPI-interface.
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