Awards
R&D
Fujitsu's award-winning areas of research include: plasma display technology, high electron mobility transistors (HEMT), integrated circuit design using gallium arsenide, surface acoustic waves (SAW), wavelength division multiplexing (WDM), large-scale integrated circuit (LSI) manufacturing, object-oriented databases, biometrics and artificial intelligence (AI).
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11 September 2006
Quantum Dot Laser Technology from Fujitsu Laboratories, QD Laser, and University of Tokyo Wins Wall Street Journal Technology Innovation Awards 2006 Runner-Up Award for SemiconductorsFujitsu Laboratories won a Wall Street Journal Technology Innovation Awards 2006 award (Semiconductor, Runner-Up) for its quantum dot laser technology.
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25 October 2005
Fujitsu Palm Vein Authentication Technology Wins The Wall Street Journal 2005 Innovation Award for Security in NetworksFujitsu palm vein authentication technology has won The Wall Street Journal's 2005 Innovation Award in the category of Security for Networks. The award was granted to Fujitsu Laboratories Limited.
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15 July 2005
Fujitsu Laboratories Researcher Wins First GGF Leadership AwardHiro Kishimoto of Fujitsu Laboratories Ltd. was presented with the first Global Grid Forum (GFF) Leadership Award ever at GGF14 held in June 2005 in Chicago. The Award was presented to Mr. Kishimoto for his outstanding leadership and his many contributions to the GGF mission of pervasie adoption.
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25 February 2005
Fujitsu Wins Most Prestigious Award at Nano Tech 2005Fujitsu Limited was awarded the Nano Tech Award of the Nano Tech 2005 International Nanotechnology Exhibition and Conference held by exhibitors from worldwide. The award is recognized as the most prestigious award presented at Nano Tech, and was presented today to Fujitsu Limited for its development with Fujitsu Laboratories Ltd. of simulation technology which plays an important role in nanotechnology research and development, and in addition for its future-generation LSI (large-scale integrated circuit) via interconnection technology utilizing carbon nanotubes.
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5 February 1998
Fujitsu Engineer to Receive 1998 IEEE Morris N. Liebmann Memorial AwardDr. Naoki Yokoyama of Fujitsu Laboratories received the 1998 IEEE Morris N. Liebmann Memorial Award for his contributions to and leadership in the development of self-aligned refractory-gate gallium arsenide MESFET integrated circuits.
For more information on Fujitsu's R&D activities, please visit our R&D pages.
