Gallium-nitride (GaN)
A wide band-gap semiconductor material that operates stably at high temperatures and with a higher breakdown-voltage than semiconductor technologies based on previous materials, such as silicon (Si)- or gallium-arsenide (GaAs)-based technologies.
 High Electronic Mobility Transistor (HEMT)
A field-effect transistor that takes advantage of operation of the electron layer at the boundary between different semiconductor materials that is relatively rapid compared to that within conventional semiconductors. Fujitsu pioneered its development in 1980, and the technology now underpins much of today's ICT infrastructure, including satellite transceivers, wireless equipment, GPS-based navigation systems, and broadband wireless networking systems.
Name for the radio band from 75 to 110 GHz. Used for high-speed wireless communications, automotive radar, image sensors, and other applications.
 Digital divide
Refers to economic differences between those people or regions with good access to information and communications technology, versus those people or regions with poor access.
Fujitsu is a leading provider of ICT-based business solutions for the global marketplace. With approximately 170,000 employees supporting customers in 70 countries, Fujitsu combines a worldwide corps of systems and services experts with highly reliable computing and communications products and advanced microelectronics to deliver added value to customers. Headquartered in Tokyo, Fujitsu Limited (TSE:6702) reported consolidated revenues of 4.6 trillion yen (US$50 billion) for the fiscal year ended March 31, 2010. For more information, please see: www.fujitsu.com.
Founded in 1968 as a wholly owned subsidiary of Fujitsu Limited, Fujitsu Laboratories Limited is one of the premier research centers in the world. With a global network of laboratories in Japan, China, the United States and Europe, the organization conducts a wide range of basic and applied research in the areas of Next-generation Services, Computer Servers, Networks, Electronic Devices and Advanced Materials. For more information, please see: http://jp.fujitsu.com/labs/en.
Press ContactsPublic and Investor Relations Division
Technical ContactsAdvanced Devices Research Lab.
Company:Fujitsu Laboratories Ltd.
All other company or product names mentioned herein are trademarks or registered trademarks of their respective owners. Information provided in this press release is accurate at time of publication and is subject to change without advance notice.
Date: 04 October, 2010
City: Tokyo and Kawasaki, Japan
Company: Fujitsu Limited, Fujitsu Laboratories Ltd., , , ,
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