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[1] Gallium nitride HEMT
A gallium nitride (GaN) semiconductor is more resistant to breakdown due to electrical fields than conventional semiconductor materials, such as silicon (Si) or gallium arsenide (GaAs). When used in a HEMT structure, it enables high-speed operation at high voltages. For more information: http://www.fujitsu.com/global/news/pr/archives/month/2005/20051205-02.html
[2] HEMT (high electron-mobility transistor)
A field-effect transistor that takes advantage of the fact that electrons at the junction between two different compound semiconductors move more rapidly than when they are within conventional semiconductors. Fujitsu led the industry by pioneering development of this transistor structure in 1980.
[3] Digital pre-distortion technology
Distortion compensation technology in which a signal that can offset the distortion generated by an amplifier is added in advance to the amplifier's input signal.
[4] Power efficiency of roughly 30%
Refers to efficiency for OFDM-16QAM signals.
[5] Double the power efficiency of conventional amplifiers
Refers to comparison of amplifiers that are used with currently available 3G systems.
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Fujitsu is a leading provider of customer-focused IT and communications solutions for the global marketplace. Pace-setting device technologies, highly reliable computing and communications products, and a worldwide corps of systems and services experts uniquely position Fujitsu to deliver comprehensive solutions that open up infinite possibilities for its customers' success. Headquartered in Tokyo, Fujitsu Limited (TSE:6702) reported consolidated revenues of about 4.8 trillion yen (US$40.6 billion) for the fiscal year ended March 31, 2006. For more information, please see:http://www.fujitsu.com
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Date: 02 March, 2007
City: Tokyo
Company:
KDDI Corporation,
Fujitsu Limited,
Fujitsu Laboratories Ltd.,
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