Fujitsu and Advantest to Establish Joint Venture to Create Semiconductor Prototypes Using Electron Beam Direct Lithography

Fujitsu Limited and Advantest Corporation today announced plans to establish a joint venture to create prototype semiconductors by using electron beam direct lithography⁽¹⁾, a technology that combines 65 nanometer (nm) and 45 nm semiconductor process technologies with electron beam exposure devices. The companies are currently discussing the terms of a formal contract, targeting November for this year for establishment of the joint venture.

The joint venture will combine leading-edge semiconductor process technology from Fujitsu with electron beam exposure devices developed and manufactured by Advantest, to develop electron beam direct lithography applicable for 65nm and 45nm process technologies.

Advantest plans to newly develop electron beam exposure devices applicable for 65nm and 45nm process technologies, and supply the devices to the joint venture. The joint venture and Fujitsu plan to collaborate to develop process technologies that are suited for electron beam direct lithography. The companies are targeting practical application of electron beam direct lithography on 300 millimeter (mm) wafers for 65 nm process technology as a world's first.

Using technologies it develops, in fiscal 2007 the joint venture plans to provide customers with 65nm process prototype services (shuttle services) as a new development environment, and make the environment suitable for 45nm process technologies in the future.

Overview of the joint venture (tentative):

Date of establishment: November, 2006
Share ratio: Fujitsu Limited: 55%, Advantest Corporation: 45%
Headquarters: Within Fujitsu's current facilities