GTM-MQNC2Z4
Skip to main content
  1. Home >
  2. About Fujitsu >
  3. Resource Center >
  4. Awards >
  5. Microelectronics & Electronic Devices

Microelectronics & Electronic Devices Awards

  • 29 April 2015
    Development of ferroelectric random access memory
    Dr. Takashi Eshita, director of SYSTEM MEMORY DIVISION in FUJITSU SEMICONDUCTOR LIMITED, awarded a Medal with Purple Ribbon (Shiju Hosho) by the Japanese Government for his considerable contribution to the development of ferroelectric random access memory (FRAM). FRAM is the key semiconductor memory using ferroelectric material applied to IoT related devices, such as smart card, authentication system, and radio frequency identification (RFID) tag. The award ceremony was held at Josuikaikan Hall in Tokyo on May 15, thereafter he had an audience with the Japanese Emperor at Homeiden in the Imperial Palace.
  • 21 November 2014
    Development of high-reliability technologies for Ferroelectric Random Access Memory and its mass-production
    Two FUJITSU SEMICONDUCTOR LIMITED (FSL) engineers , Takashi Eshita and Shoichiro Kawashima, and Vice President of FSL, Shigeo Kashiwagi, who developed the reliability technologies of ferroelectric random access memory (FRAM) used in smart card, authentication devices etc, have won the 14th Yamazaki-Teiich Prize in the field of semiconductors and semiconductor devices. The award ceremony was held on November 21th 2014 at the Japan Academy in Ueno, Tokyo
  • 15 April 2014
    Development of mass production technology for high density Ferroelectric Random Access Memory
    Five Fujitsu Semiconductor engineers, who developed ferroelectric memory used in smart card, smart meter, authentication devices, etc, have won the Fiscal 2014 Commendation for Science and Technology Prize (Development Category), which was awarded by the Minister of Education, Culture, Sports, Science, and Technology. The award ceremony was held on April 15th, 2014 at the auditorium of the Ministry of Education, Culture, Sports, Science and Technology.
  • 26 March 2014
    Development of mass production technology for high density Ferroelectric Random Access Memory (FRAM)
    Five Fujitsu Semiconductor engineers, who developed ferroelectric memory used in smart cards and smart meter authentication devices, have won the 60th Okochi Memorial Technology Prize. The award ceremony was held on March 26, 2014 at the Industry club Japan in Tokyo.
  • 27 November 2013
    Development of mass production technology for high density Ferroelectric Random Access Memory (FRAM)
    Three Fujitsu Semiconductor engineers, who developed ferroelectric memory used in smart card, smart meter, authentication devices, etc, have received The Minister of Education, Culture, Sports, Science and Technology award and The 61th Promotion Foundation for Electrical Science and Engineering Award (Ohm Technology Award). The former award delivered to only one recipient selected among the later winners. The award ceremony was held on November 27th, 2013 at THE GAKUSHI KAIKAN in Tokyo.
  • 1 May 2003
    Fujitsu's Sweep Sensor, MBF300 Biometric Sensor IC Wins 2002 EDN Magazine Innovation Award
    Sunnyvale, CA, May 1, 2003 - EDN Magazine announced that Fujitsu's MBF300, Sweep Sensor IC won the 2002 "Innovation of the Year" award in the peripherals category. Last year, Fujitsu's Fast Cycle RAM (FCRAM) ICs and plasma display products (PDPs) won awards.
  • 5 March 2003
    Design News Magazine Names Fujitsu's MBF300 Sweep Sensor 2002 Product of the Year
    Readers select Fujitsu's fingerprint sensor technology from seven finalists
GTM-WN79F2