FRAM
Standalone FRAM
Offering FRAM as standalone devices gives designers the flexibility to add FRAM to any system that requires high-speed non-volatile memory. Unlike other NVRAM technologies, FRAM does not rely on battery power to back up its data, reducing cost and board space in the overall system.
Typical applications include storing settings, configuration, and status information. Data are used subsequently to enable clean restores, provide troubleshooting analysis of previous status and activate recovery actions. In addition, FRAM's byte-wise random access makes memory management more efficient.
FRAM is simply a non-volatile memory that runs like a RAM. It gives programmers the freedom to assign ROM and RAM memory mapping based on the requirement, rather than limited by the technology, whilst for end-users it opens possibilities such as storing personalised settings and preferences.
Standalone FRAM allows designers to use their creativity to the full, exploring and employing FRAM in a wide range of applications.
MB85R256H
LSI for FRAM Standalone Memory
FRAM Standalone Memory with density of 256K bits. The bit configuration is 32K words x 8 bits and this device offers enhanced access speed and cycle time along with lower operating voltage.
Features
- Operating power supply voltage: +2.7V to +3.6V
- Operating temperature range: -40°C to +85°C l
- Access time: 70ns l Cycle time: 150ns
- Data writing/reading endurance: 1010 times
- SOP 28 pin package
- TSOP TYPE I 28 pin package
MB85R2001 / MB85R2002
FRAM Standalone Memory with a density of 2M bits. The bit configuration of MB85R2001 is 256K words x 8 bits. MB85R2002 is 128K words x 16 bits. Uses pseudo SRAM interface based on existing asynchronous SRAM.
Features
- Operating power supply voltage: +3.0V to +3.6V
- Operating temperature range: -20°C to +85°C
- Access time: 100ns l Cycle time: 150ns
- Data writing/reading endurance: 1010 times
- Data retention: 10 years (+55°C)
- TSOP TYPE I 48 pin package
MB85R1001 / MB85R1002
LSI for FRAM Standalone Memory LSI
FRAM Standalone Memory with density of 1M bits. The bit configuration of MB85R1001 is 128K words x 8 bits. MB85R1002 is 64K words x 16 bits. Uses pseudo SRAM interface based on existing asynchronous SRAM.
Features
- Operating power supply voltage: +3.0V to +3.6V
- Operating temperature range: -20°C to +85°C l
- Access time: 100ns l Cycle time: 150ns
- Data writing/reading endurance: 1010 times
- TSOP TYPE I 48 pin package
MB85RS256
FRAM Standalone Memory with a density of 256K bits in a small SOP 8 package.
Bit configuration of MB85RS256 is 32K words x 8bits.
High-speed serial peripheral interface (SPI).
Features
- Operating power supply voltage: +3.0V~+3.6V
- Operating temperature range: -20°C~+85°C
- Clock speed: 15MHz (Max.)
- Data writing/reading endurance: 1010 times
- SOP 8 pin package
