FRAM-Ferroelectric RAM
FRAM® is nonvolatile and writes fast!
Ferroelectric memory, FRAM (Ferroelectric RAM) is a non-volatile memory offering high-speed writing, low power consumption and long rewriting endurance. It reduces the burden of OEM development because there is no need to differentiate between RAM and ROM. Furthermore, because no batteries are needed, the use of FRAM has benefits for manufacturing, maintenance and the environment. Fujitsu FRAM products include LSI devices for standalone memory smart cards and RFID. We also respond flexibly to customer requirements by creating custom LSI.
Fujitsu has to date (December 2005) delivered more than 300 million FRAM devices. We lead the world in developing and manufacturing FRAM.
FRAM product news
- 14 November 2007
- Fujitsu launches world's first embedded-FRAM device for digital TV enabling simultaneous use of 4-channel HDMI connector ports
Langen, November 14, 2007 – One-chip solution reduces costs, programming time and mounting space
- 18 April 2007
- Fujitsu Starts Volume Production of 2 Mbit FRAM Chips
Tokyo, April 18, 2007 – Fujitsu Limited ("Fujitsu") today announced the availability of its 2 Megabit (Mbit) FRAM memory chips, the largest capacity FRAM in volume production in the world. The two FRAM memory products, MB85R2001 and MB85R2002, have the characteristics of FRAM which is a non-volatile memory that features high-speed data writing, low power consumption, and which can endure a high number of write cycles.
- 29 January 2007
- Epson and Fujitsu Announce Results of Joint Project to Develop Next-Generation FRAM Technology
Tokyo, January 29, 2007 – Seiko Epson Corporation ("Epson") and Fujitsu Limited ("Fujitsu") today announced the results of their joint project to develop next-generation FRAM technology.
- 15 June 2005
- Fujitsu and Epson Announce Joint Development of Next-generation Technology for FRAM Non-Volatile Memory
Tokyo, June 15, 2005 – Fujitsu and Epson Announce Joint Development of Next-generation Technology for FRAM Non-Volatile Memory
