Fujitsu Microelectronics Europe
Fujitsu introduces 256Mbit Mobile FCRAM™ compliant with COSMORAM Rev.4
Unique Fujitsu technology provides high-speed, low power consumption for optimum mobile phone performance
Langen, Germany, 28 November, 2006 — Fujitsu Microelectronics Europe GmbH (FME) today announced the availability of a new 256Mbit Mobile Fast Cycle RAM (FCRAM). The Mobile FCRAM is a pseudo static RAM (PSRAM) with an SRAM interface on Fujitsu’s unique FCRAM core technology. The device has the advantage of high-speed operation together with low power consumption, making it especially well-suited for portable applications such as mobile phones.
The new Mobile FCRAM, the MB82DDS08314A, adopts double data rate (DDR) burst mode operations and is fully compliant with the common specifications for Mobile RAM (COSMORAM) Revision 4(1).
The device has the following features:
- DDR synchronous burst mode
- Multiplexed address/data interface
- High-speed data transfer performance of max. 1GByte/s
- Short initial access time by short latency mode
“For the future mobile phone market, there is no doubt that memories featuring large-density, high-speed operation and low power consumption, like this new Mobile FCRAM, become necessary components,” said Mark Ellins, Director of the Communications Business Unit at FME. “Today, high-end mobile phones require feature-rich functions such as digital still and video cameras, and digital terrestrial broadcasting streaming. Fujitsu’s FCRAM family will provide high-speed data rate to enhance the mobile phone feature on the existing PSRAM-based platform. Furthermore, the MB82DDS08314A minimises the device pin-counts by multiplexing address and data bus, and smaller pin counts will eliminate the customer’s complicated board design.”
Fujitsu is the pioneer of pseudo SRAM for mobile phone markets and is a major contributor to the establishment and expansion of the market. In the past, to meet the needs of high-speed memory, Fujitsu introduced the burst mode Mobile FCRAM family, 32Mbit/ 64Mbit devices in May of 2003 and a 128Mbit device in August of 2003.
In addition to the new DDR burst Mobile FCRAM, 256Mbit single data rate (SDR) Mobile FCRAM, the MB82DBS08314A, compliant with the conventional COSMORAM Rev.3, is also offered. This device is the solution for customers who need large RAM density with an existing SDR PSRAM interface.
Engineering samples will be available in January 2007, and volume production will be available in April 2007. Both devices are available packaged, as well as in chip and wafer form.
FME continues to offer the best memory solutions to individual customers for their unique applications.
Main Specifications
| Part Number | MB82DDS08314A | MB82DBS08314A |
|---|---|---|
| COSMORAM Revision | Revision 4 | Revision 3 |
| Memory Density | 256Mbit | |
| Supply Voltage | 1.7 to 1.95V | |
| I/O Configuration | x32-bit Address Data Multiplex Bus | |
| Burst Frequency | 135MHz | 108MHz |
| Interface | DDR | SDR |
| Data Transfer Rate | 1GByte/s | 400MBytes/s |
| Initial Access Time (max) | 45ns | 70ns |
| Clock Access Time (max) | 6ns | 7ns |
Trademark notice
FCRAM is a trademark of Fujitsu Limited. All other company/product names mentioned herein are trademarks or registered trademarks of their respective companies.
Glossary
- 1
- Common Specifications for Mobile RAM (COSMORAM) Revision 4. Common specifications for double data rate burst pseudo SRAM user interface announced by Fujitsu, NEC Electronics and Toshiba on February 15, 2006.
About Fujitsu Microelectronics Europe
Fujitsu Microelectronics Europe (FME) is a major supplier of semiconductor and plasma display products. The company provides
advanced systems solutions to the automotive, digital TV, mobile telephony, networking and industrial markets. Engineers from
design centres dedicated to microcontrollers, graphics controllers, mixed-signal, wireless, FRAM, multimedia ICs and ASIC
products work closely with FME's marketing and sales teams throughout Europe to help satisfy customers' system development
requirements. This solutions approach is supported by a broad range of advanced semiconductor devices, IP and building blocks
as well as leading-edge plasma display panels.
For more information, please see: http://emea.fujitsu.com/microelectronics
A Medium resolution picture relevant to this press release can be found by following the link: ftp://213.166.4.46/Fujitsu/Press/MRPR864.jpg
For a high resolution download option please follow the link: ftp://213.166.4.46/Fujitsu/Press/HRPR864.zip
Picture caption: The new 256Mbit Mobile FCRAM from Fujitsu Microelectronics Europe provides high-speed operation together with low power consumption.
