Fujitsu Microelectronics Europe
Fujitsu and Epson Announce Joint Development of Next-generation Technology for FRAM Non-Volatile Memory
Tokyo, June 15, 2005 — Tokyo, June 15, 2005 - Fujitsu Limited (“Fujitsu”) and Seiko Epson (“Epson”) today announced their agreement for joint development of next-generation technology for Ferroelectric Random Access Memory (FRAM)1 non-volatile memory2 .
According to the agreement, the two companies plan to develop highly integrated next-generation FRAM that is one-sixth the cell area of conventional FRAMs on the market, targeting completion in the first half of 2006. Fujitsu and Epson also plan to develop memory core process technology that features minimal constraints on the number of read/write cycles that can be executed.
In recent years, portable information devices and intelligent home appliances have become increasingly sophisticated. As a result, demand for FRAM non-volatile memory has rapidly increased, as it fulfills a wide range of market needs such as low power consumption and high read/write speeds with greater advantages compared to flash memory3 and Electrically Erasable and Programmable Read Only Memory (EEPROM)4. FRAM features non-volatile RAM functions in addition to ROM functions, thereby making it one of the best memory devices available and an ideal memory solution for system Large-Scaled Integrated circuits (LSIs).
Through their joint development of next-generation FRAM technology, the two companies plan to combine their elemental technologies, such as for FRAM materials and miniaturization processes, to enable shorter development periods.
About Fujitsu Microelectronics Europe
Fujitsu Microelectronics Europe (FME) is a major supplier of semiconductor and display products. The company provides advanced
systems solutions to the automotive, digital TV, mobile telephony, networking and industrial markets. Engineers from design
centres dedicated to microcontrollers, mixed-signal, wireless, FRAM, multimedia ICs and ASIC products work closely with FME's
marketing and sales teams throughout Europe to help satisfy customers' system development requirements.
This solutions approach is supported by a broad range of advanced semiconductor devices, IP and building blocks as well as
leading-edge Plasma Display Panels. For more information visit FME's website at
For more information, please see: http://emea.fujitsu.com/microelectronics
About Epson
Epson is a global leader in imaging products including printers, projectors and LCDs. With an innovative and creative culture, Epson is dedicated to exceeding the vision and expectations of customers worldwide with products known for their superior quality, functionality, compactness and energy efficiency. Epson is a network of 85,647 employees in 115 companies around the world, and is proud of its ongoing contributions to the global environment and to the communities in which it is located. Led by the Japan-based Seiko Epson Corp., the Group had consolidated sales of 1479.7 billion yen in fiscal 2004.
Glossary and Notes
1. FRAM (Ferroelectric Random Access Memory):
Non-volatile memory that uses a ferroelectric film on the capacitor for data retention. This memory technology features advantages
of both ROM and RAM, such as high-speed data read/write functions, low power consumption, and virtually unlimited read/write
cycles.
2. Non-volatile memory:
Memory that retains data even when a device is switched off.
3. Flash memory:
Read-only non-volatile memory capable of being erased and rewritten in blocks (sectors).
4. EEPROM (Electrically Erasable and Programmable Read Only Memory): Read only nonvolatile memory capable of being erased
and rewritten electrically.
FRAM is a registered trademark of Ramtron International Corporation (U.S.A.)
All other product names and proper names mentioned are trademarks or registered trademarks of the appropriate companies.
