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  4. 快速循環隨機記憶體(FCRAM)

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快速循環隨機記憶體(FCRAM™)

富士通的快速循環隨機記憶體(FCRAM™)是一種具備創新技術的動態隨機記憶體(DRAM)核心架構,以近似DRAM的產品價格造就能比媲美SRAM產品的效能。FCRAM™全新的核心概念能透過獨有的管線運作和隱藏式預充電提模式,將隨機存取的週期時間降低到少於目前最快SDRAM技術(Rambus和DDR記憶體技術)的一半。此外,FCRAM™ 的多重分段記憶體核心在同樣匯流排頻寬運作條件下,耗電量不到SDRAM的一半。

富士通目前具備SRAM介面的FCRAM™樣本適用於各種手機應用,而具備DDR介面的FCRAM™樣本適用於各種網路應用。FCRAM™可針對各種應用的需求作進一步開發。所有以FCRAM™架構為基礎的ASM系列元件最早發表於1998年6月的VLSI研討會中。

[ FCRAM : Consumer FCRAM/Low Power SDRAM/LP-SDRAM/LPSDRAM/Mobile SDRAM ]

Product name Application bit Organization (Bank x) W x b Clock Frequency (Max.) MHz Clock Period (Min.) ns Access Time (Max.) ns Supply Current Max. (Operating) mA Supply Current Max. (Standby) uA Supply Voltage V
MB81ES171625-12 16M 2 x 512K x 16 85 11.7 10.2 30 1000 +1.65 to +1.95
MB81ES171625-15 16M 2 x 512K x 16 66.7 15 12 30 1000 +1.65 to +1.95
MB81ES171625-15-X 16M 2 x 512K x 16 66.7 15 12 30 1000 +1.65 to +1.95
MB81ES173225-12 16M 2 x 256K x 32 85 11.7 10.2 30 1000 +1.65 to +1.95
MB81ES173225-15 16M 2 x 256K x 32 66.7 15 12 30 1000 +1.65 to +1.95
MB81ES173225-15-X 16M 2 x 256K x 32 66.7 15 12 30 1000 +1.65 to +1.95
MB81ES123245-10 128M 4 x 1M x 32 108 9.2 7 5 500 +1.7 to +1.9

[ FCRAM : Mobile FCRAM/Pseudo SRAM/pSRAM/COSMORAM ]

Product name Application bit Organization (Bank x) W x b Initial Access Time (Max.)ns Page Mode Access Time (Max.)ns Burst Clock Access Time (Max.)ns Supply Current Max. (Standby)uA Supply Current Max. (Power Down)uA Shipping Style
MB82D01181E-60L 16M 1M x 16 60 N/A N/A 100 10 Chip or Wafer
MB82DS01181E-70L 16M 1M x 16 70 N/A N/A 100 10 Chip or Wafer
MB82DP02183C-65L 32M 2M x 16 65 20 N/A 80 10 Chip or Wafer
MB82DP02183D-65L 32M 2M x 16 65 20 N/A 100 10 Chip or Wafer
MB82DBS02163C-70L 32M 2M x 16 70 20 12 80 10 Chip or Wafer
MB82DBS02163D-70L 32M 2M x 16 70 20 8 100 10 Chip or Wafer