Overview |  FRAM Advantage |  Products |

---

Ferroelectric RAM

FRAM Advantage

What is FRAM?
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory combining both ROM and RAM advantages in addition to non-volatility features. Its higher speed in write mode, its lower power consumption as well as its higher endurance, make FRAM superior to any other memory type. As a high-speed non-volatile memory, FRAM can be used in the wide range of offerings.

FRAM Benefits

• High speed
• High security
• Low power consumption
• Minimum 10 year data retention
• High endurance of minimum 10E10
• Random access
• Byte access
• Low cell internal voltage of 5G for 0.5um and 3.3V for 0.35um
• No need for booster circuit for voltage matching with CMOS

FRAM™ Advantages over EEPROM

		1. Transaction Time: - 30,000 times faster than EEROM - 1kByte R/W as a general use in transportation (contact-less cards)
		2. Energy Consumption: - 100,000 times higher endurance over EEPROM - Energy Consumption @64Byte Write Cycle
		3. Endurance: - 200 times lower power consumption compare to EEPROM - 1 FRAM Cycle: Read - 1 E2PROM Cycle: Erase/Write/Read