Ferroelectric RAM

The industry’s largest FRAM (Ferroelectric Random Access Memory) supplier, Fujitsu was the first company to incorporate FRAM into microcomputers in 1998 and to release the industry’s first production quantities in 1999. The next-generation nonvolatile FRAM outperforms existing memories like EEPROM and BBSRAM, consumes less power and offers higher endurance to multiple read-and-write operations. This breakthrough storage medium is used in a variety of applications including smart cards, RFID and security.

FRAM is non-volatile but operates in other respects as a RAM. It features faster write and higher write endurance, as well as lower power consumption, compared to other types of non-volatile memory such as EEPROM or Flash.

Fujitsu is the first semiconductor manufacturer to establish an embedded FRAM process. Fujitsu’s FRAM devices are produced at the Iwate plant, which is ISO9002 and ISO14001 certified.

What is FRAM material?
PZT (Pb {ZrTi}O3), perovskite-type structure (ABO3) is commonly used as a typical ferroelectric material. An electric polarization of PZT (shift up/down of Zr/Ti atom) remains after applying and removing an external electric field, from which a non-volatile property results. As a result, the power consumption required for data storage is very low.

FRAM Advantages over Non-Volatile Memories

• 30,000 times faster than EEPROM
• 100,000 times higher endurance over EEPROM
• 200 times lower power consumption than EEPROM
• Excellent tamper prevention techniques

Fujitsu provides standalone FRAMs and RFIDs as well as COT, foundry and custom design services.

Ferroelectric RAM

FRAM Advantage

What is FRAM?
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory combining both ROM and RAM advantages in addition to non-volatility features. Its higher speed in write mode, its lower power consumption as well as its higher endurance, make FRAM superior to any other memory type. As a high-speed non-volatile memory, FRAM can be used in the wide range of offerings.

FRAM Benefits

• High speed
• High security
• Low power consumption
• Minimum 10 year data retention
• High endurance of minimum 10E10
• Random access
• Byte access
• Low cell internal voltage of 5G for 0.5um and 3.3V for 0.35um
• No need for booster circuit for voltage matching with CMOS

FRAM™ Advantages over EEPROM

		1. Transaction Time: - 30,000 times faster than EEROM - 1kByte R/W as a general use in transportation (contact-less cards)
		2. Energy Consumption: - 100,000 times higher endurance over EEPROM - Energy Consumption @64Byte Write Cycle
		3. Endurance: - 200 times lower power consumption compare to EEPROM - 1 FRAM Cycle: Read - 1 E2PROM Cycle: Erase/Write/Read

Ferroelectric RAM

Standalone FRAM

Standalone FRAM offers flexibility to assimilate FRAM to any system that requires high-speed non-volatile memory. FRAM does not required battery to back up its data. This saves significant cost and board space in the overall system. Very often it can be used for storing settings, configuration, status of the devices and use the data later. These stored data can be use for resetting the devices, analyses the last status and activate recovery actions and so on. Byte-wise random access make memory management more efficient.

FRAM is simply a Non-volatile memory that runs like a RAM. This allows flexibility for programmers to assign ROM and RAM memory mapping depending on their need. It creates opportunity for end users to program FRAM at the ground to customize to their individual preference. Standalone FRAM allows creativity of designers to explore and employ FRAM in a wide range of design.

FRAM Based Radio Frequency Identity Chip (RFID)

(1): depends on reader/writer power, antenna design and other factors.