Overview | FRAM Advantage | Products |
Ferroelectric RAM
The industry’s largest FRAM (Ferroelectric Random Access Memory) supplier, Fujitsu was the first company to incorporate FRAM into microcomputers in 1998 and to release the industry’s first production quantities in 1999. The next-generation nonvolatile FRAM outperforms existing memories like EEPROM and BBSRAM, consumes less power and offers higher endurance to multiple read-and-write operations. This breakthrough storage medium is used in a variety of applications including smart cards, RFID and security.
FRAM is non-volatile but operates in other respects as a RAM. It features faster write and higher write endurance, as well as lower power consumption, compared to other types of non-volatile memory such as EEPROM or Flash.
Fujitsu is the first semiconductor manufacturer to establish an embedded FRAM process. Fujitsu’s FRAM devices are produced at the Iwate plant, which is ISO9002 and ISO14001 certified.
What is FRAM material?
PZT (Pb {ZrTi}O3), perovskite-type structure (ABO3) is commonly used as a typical ferroelectric material. An electric polarization
of PZT (shift up/down of Zr/Ti atom) remains after applying and removing an external electric field, from which a non-volatile
property results. As a result, the power consumption required for data storage is very low.
FRAM Advantages over Non-Volatile Memories
- 30,000 times faster than EEPROM
- 100,000 times higher endurance over EEPROM
- 200 times lower power consumption than EEPROM
- Excellent tamper prevention techniques
Fujitsu provides standalone FRAMs and RFIDs as well as COT, foundry and custom design services.
