2006-11-28
Fujitsu Microelectronics (Shanghai) Co. Ltd.

Fujitsu introduces 256Mbit Mobile FCRAM™ compliant with COSMORAM Rev.4

Unique Fujitsu technology provides high-speed, low power consumption for optimum mobile phone performance

Shanghai, November 28, 2006 — Fujitsu Microelectronics (Shanghai) Co. Ltd.(FMC) announced that Fujitsu Limited today announced the availability of a new 256Mbit Mobile Fast Cycle RAM (FCRAM). The Mobile FCRAM is a pseudo static RAM (PSRAM) with an SRAM interface on Fujitsu's unique FCRAM core technology, with the advantage of high-speed operation together with low power consumption, making it especially well-suited for mobile applications such as cellular phones.

The new Mobile FCRAM, the MB82DDS08314A, adopts double data rate (DDR) burst mode operations and is fully compliant with the common specifications for Mobile RAM (COSMORAM) Revision 4*. The device has the following features:

• DDR synchronous burst mode
• Multiplexed address/data interface
• High-speed data transfer performance of max. 1GByte/s
• Short initial access time by short latency mode

"For the future mobile phone market, there is no doubt that memories featuring large-density, high-speed operation and low power consumption, like this new Mobile FCRAM, become necessary components," Mr Chng Kean Wui, Marketing Director of Standard LSI Unit at FMC. "Today, high-end mobile phones require feature-rich functions such as digital still and video cameras, and digital terrestrial broadcasting streaming. Fujitsu's FCRAM family will provide high-speed data rate to enhance the mobile phone feature on the existing PSRAM-based platform. Furthermore, the MB82DDS08314A minimizes the device pin-counts by multiplexing address and data bus, and smaller pin counts will eliminate the customer's complicated board design."

Fujitsu is the pioneer of pseudo SRAM for mobile phone markets and is a major contributor to the establishment and expansion of the market. In the past, to meet the needs of high-speed memory, Fujitsu introduced the burst mode Mobile FCRAM family, 32Mbit/ 64Mbit devices in May of 2003 and a 128Mbit device in August of 2003.

In addition to the new DDR burst Mobile FCRAM, 256Mbit single data rate (SDR) Mobile FCRAM, the MB82DBS08314A, compliant with the conventional COSMORAM Rev.3, is also offered. This device is the solution for customers who need large RAM density with an existing SDR PSRAM interface.

Engineering samples will be available in January 2007, and volume production will be available in April 2007. Both devices are available packaged, as well as in chip and wafer form.

Glossary

1 Common Specifications for Mobile RAM (COSMORAM) Revision 4.:

Common specifications for double data rate burst pseudo SRAM user interface announced by Fujitsu, NEC Electronics and Toshiba on February 15, 2006.

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Fujitsu Microelectronics (Shanghai) Co.,Ltd.

Fujitsu Microelectronics (Shanghai) Co., Ltd. was established in August 2003 as Fujitsu's semiconductor business representative in China. Headquartered in Shanghai, it has branch offices in Beijing and Shenzhen to provide sales and service support to customers throughout China.
Fujitsu Microelectronics (Shanghai) Co., Ltd. offers an extensive range of products from microcontroller, application-specific integrated circuit (ASIC), application-specific standard product (ASSP), system-on-chip (SoC) to system memory, that can be supplied as product or complete solution. With technology resource centres and ASIC design support centres strategically located in Shanghai, Hong Kong, and Singapore, as well as Heavy investments in design and engineering capabilities and application support resources, complemented by a regional network of design partners, suppliers and distributors, Fujitsu Microelectronics (Shanghai) Co., Ltd. can readily delivers innovative and value-added solutions and varied range of products to its target markets in China.
For more information, please see: http://cn.fujitsu.com/fmc/en/

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Trademark notice:
FCRAM is a trademark of Fujitsu Limited. All other company/product names mentioned herein are trademarks or registered trademarks of their respective companies.