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  5. Fujitsu Introduces New 128Mbit Mobile FCRAM Complying with COSMORAM Rev.3

2004-11-09
Fujitsu Microelectronics (Shanghai) Co., Ltd.


Fujitsu Introduces New 128Mbit Mobile FCRAM Complying with COSMORAM Rev.3


Shanghai, November 9, 2004 — Fujitsu Microelectronics Asia Pte Ltd today announced the sample availability of a new 128Mbit Mobile Fast Cycle RAMTM(1) device that adopts burst mode operations complying with Common Specifications for Mobile RAM (COSMORAM(2)) Revision 3, for use in mobile phone applications. The device's high-speed performance and large density make it ideal for 3G mobile phone vendors looking to provide advanced applications.

The new 128Mbit device "MB82DBS04314C" and "MB82DBS08164C" achieves maximum burst operation frequency of up to 108MHz with a single 1.8V supply voltage, which satisfies the memory requirement for next generation mobile phone applications. The device provides a high data transfer rate as burst mode enables fast successive read/write operation through synchronisation with the system clock.

The maximum standby current of 300μA can be dramatically cut by user configurable power-down modes such as sleep mode and partial power-down mode. In addition, "MB82DBS04314C" is the first 128M PSRAM in the world that adopts a 32 bit address/data multiplexed bus to realise more than double the data transfer rate compared with existing products, by extension of the data bus width, and reduces the pin-count for easier customer board design.

These sample devices will be available in a monolithic package, and chip or wafer form for embedded applications, including use in multi chip package memory solutions.

This announcement underlines Fujitsu's commitment to the continued development and production of high value-added Application-Specific Memory products, in response to customer requirements.

Main Specifications

Part Number MB82DBS04314C MB82DBS08164C
Density 128Mbit
I/O Configuration x32 Address/Data multiplex bus x16
Supply Voltage VDD 1.7 ~ 1.95 V
Burst Operation Frequency 108MHz
Clock Access Time (Max) tAC 6 ns
Random Access Time (Max) tCE 70 ns
Standby Current (Max) IDDS1 300 μA
Power Down Current (Max) IDDPS 10 μA
Fast Cycle RAMTM:
Fujitsu's unique core technology with features of high-speed and low power consumption. Mobile FCRAM is pseudo static RAM, with an SRAM interface on a FCRAM core.
COSMORAM:
Common specifications for next generation mobile pseudo SRAM user interface announced by Fujitsu, NEC Electronics, and Toshiba on February 17, 2003.

About Fujitsu Microelectronics (Shanghai) Co., Ltd.

Fujitsu Microelectronics (Shanghai) Co., Ltd. is a newly established company in China. This new venture is part of Fujitsu's ongoing strategy to strengthen its presence in the China semiconductor market. Being operational since October 30, 2003, Fujitsu Microelectronics (Shanghai) Co., Ltd. serves as a focal point for the design, development and sales of Fujitsu's semiconductor products in the China market.
The product portfolio of Fujitsu Microelectronics (Shanghai) Co., Ltd. includes ASIC, MCU, ASSP/SOC, system memory, both as stand alone products and solutions for a wide range of applications. More information, please go to http://cn.fujitsu.com/fmc/en/


Press Contacts

Fujitsu Microelectronics (Shanghai) Co., Ltd.
Marketing Communication Manager:Miao Cao
Tel: +86-21-6335-1565
Fax: +86-21-6335-1605
E-mail:marcom@fmc.fujitsu.com


Customer Contacts

Fujitsu Microelectronics (Shanghai) Co., Ltd.
Marketing Manager:Galvin Lian
Tel: +86-21-6335-1560
Fax: +86-21-6335-1610
E-mail:galvinlian@fmc.fujitsu.com




Trademark Notice: FCRAM is a trademark of Fujitsu Ltd. All other company/product names mentioned herein are trademarks or registered trademarks of their respective companies.