Memory

Documentation

• FCRAM
• FRAM
• Flash

FCRAM

• 16 Mbit (1M word x 16 bit) Mobile Phone Application Specific Memory
  MB82D01171B-60L/-60LL/-70L/-70LL Data Sheet

  The Fujitsu MB82D01171B is a CMOS Fast Cycle Random Access Memory (FCRAM) with asynchronous Static Random Access Memory (SRAM) interface containing 16,777,216 storages accessible in a 16-bit format. This MB82D01171B is suited for mobile applications such as Cellular Handset and PDA.

• 32M-bit / 64M-bit Mobile FCRAMTM MB82D02172A / MB82D04172 Fact Sheet

  FUJITSU has developed 32M-bit and 64M-bit Mobile FCRAMTMs, these memories provide large-density, high-speed, low-power-consumption reguired for mobile applications. These Mobile FCRAMTMs are used as work memory device to store a variety of contents in the next generation of mobile phones.

• Synthesizable High Performance FCRAMTM Controller Fact Sheet

  Fast Cycle RAM (FCRAM) provides a significant improvement in memory bandwidth. FCRAM enhances throughput in systems approaching 200 MHz and beyond where cache misses are occurring more frequently.

• The Latest RAM Solutions for Mobile Phones: Mobile FCRAMTM Family Fact Sheet

  To support the development of multi-functions in mobile phones, FUJITSU has commercialized a Mobile FCRAMTM configured with a high-speed page mode and 1.8V power supply. This article describes the latest trends in the Mobile FCRAMTM RAM solution.

FRAM

• 1M-bit (x8/x16) FRAM, MB85R1001/MB85R1002 (Article)

  This products is a FRAM of 1M-bit 1T1C cell design, featuring high-density, low-power consumption, and high-performance of write/read operation times.

• EDID Memory LSI with 4 DDC (I2C) Ports for Digital TVs - MB85RF402 (229KB PDF)

  Fujitsu Find Magazine: Vol.26 No.1 2008

• FRAM-Embedded Large-Capacity, High-Speed RFID LSI FerVID Family, MB89R118 (Article)

  MB89R118 is a large-capacity, high-speed RFID LSI and compliance with the international standard, ISO/IEC15693, to make the most of the efficiency. It is embedded with FRAM which can write the data twice as fast as conventional device and it has large-capacity 2Kbytes memory size.

• FRAM Low-Voltage Sensing Technology (Article)

  FUJITSU recently invented a FRAM-sensing method that can effectively apply voltage to the cell capacitor even under low-voltage power supply conditions, essentially by reading the bit-line potential in the proximity of the GND potential. This article introduces a FRAM memory voltage reduction technology that adopts this new sensing method.

• FRAM-Mounted High-Capacity, High-Speed LSI for RFID Tag MB89R116 (Article)

  A high-capacity, high-speed LSI for an RFID tag that conforms to the international
  standard, ISO/IEC15693. Capable of reading/writing the data of the maximum
  2,000 characters with 1.5sec. read time and 1.4sec. write time. Wide range of supported temperatures for use and storage, and quality/product control is possible under severe environmental conditions.

• Fujitsu Announces Volume Production of 2Mbit FRAM ICs; New Non-volatile, Low-Power ICs Serve Automotive, Printer, Instrumentation Applications

  The Fujitsu MB85R2001 and MB85R2002 feature non-volatile memory with high-speed data writing, low power consumption, and the ability to provide a high number of write cycles. They are ideal for automotive navigation systems, multi-function printers, measuring instruments, and other advanced applications that can use non-volatile memory to store various parameters, record equipment operating conditions, and preserve security information.

• Fujitsu FRAM Technology & Products (Presentation)

  FRAM overview, basics, main strengths, key features, comparison of energy consumption, FRAM Advantage of Design Rule Shrink, Fujitsu Embedded FRAM Process, FRAM Product Line-Up & Roadmap

• Fujitsu Stand Alone FRAM (Presentation)

  FRAM Positioning, Target Market, Examples of Standalone FRAM Usage

• MB85R1001 1M FRAM Specifications
• MB85R1002 1M FRAM Specifications
• MB85R256/256A FRAM Memory, CMOS, 256K (32Kx8) Bit Data Sheet

  The MB85R256/256A is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells.

• MB89R118 ISO/IEC15693 Compliant FRAM Embedded High-speed RFID LSI Datasheet

  The MB89R118 is an LSI device that has built-in high-speed, large-capacity FRAM and is used for vicinity-RFID.

• 
  Redundant Circuit Technology and Variable Reference Voltage Circuit Technology for FRAM (Article)

  Fujitsu's redundant circuit technology and variable reference voltage circuit technology was selected for an excellence prize at the eighth "LSI Design of the Year" (Run by the Handolai Sangyo Shimburi) for its contributions to the commercialization of large-size FRAM.

• Security Design of Smart Cards and Secure Devices with Embedded FRAM (Article)

  Current memories implement various security functions such as parameter storage/updating, high-speed processing of cryptographic algorithms, firewalls between applications, and anti-tampering measures. This article presents the FRAM applications in cipher and security system development employing FRAM.

Flash

• Flash memories double data storage (Article)

  The MBM29PL64x 64-Mbit NORtype flash memories claim to be the industry’s first to be based on MirrorFlash architecture, a multibit cell technology jointly developed with Advanced Micro Devices. Unlike single-bit floating-gate cells, the
  0.23-µm CMOS devices trap electrons on two sides of the insulated layer of a single physical cell and forms two electron spots, thereby enabling a cell to store 2 bits of data.