Fujitsu Microelectronics America, Inc.
Fujitsu Introduces New 128Mbit Mobile FCRAMTM for Advanced Cellular Phone Applications
Sunnyvale, CA, November 8, 2004 — Fujitsu Microelectronics America, Inc. (FMA) today announced the sample availability of a new 128Mbit Mobile Fast Cycle RAM (FCRAM™) device that adopts burst mode operations complying with Common Specifications for Mobile RAM (COSMORAM) Revision 3, for use in mobile phone applications. The device's high-speed performance and density make it ideal for advanced applications in 3G mobile phones.
The new 128Mbit MB82DBS04314C and the MB82DBS08164C achieve maximum burst-operation frequencies of up to 108MHz with a single 1.8V supply voltage, meeting the memory requirements of next-generation mobile phone applications. The devices provide a high data transfer rate, as burst mode enables fast successive read/write operation through synchronization with the system clock.
The maximum standby current of 300μA can be dramatically cut by user-configurable power-down modes such as sleep mode and partial power-down mode. In addition, the MB82DBS04314C is the first 128M Pseudo-Static RAM (PSRAM) that adopts a 32-bit address/data multiplexed bus that more than doubles the data-transfer rate compared with existing products, by extension of the data bus width. It also reduces the pin count, simplifying customer board design.
Pricing and Availability
Sample devices will be available in a monolithic package, and in chip or wafer form for embedded applications, including use
in multi-chip package memory solutions. Pricing begins at $14.00 each in 10,000-unit quantities.
This announcement underlines Fujitsu's commitment to the continued development and production of high value-added Application-Specific Memory products, in response to customer requirements
Main Specifications
| Part Number | MB82DBS04314C | MB82DBS08164C | |
| Density | 128 MBit | ||
| I/O Configuration | x32 Address/Data Multiplex Bus |
x16 | |
| Supply Voltage | VDD | 1.7 ~ 1.95 V | |
| Burst Operation Frequency | 108 MHz | ||
| Clock Access Time (Max) | tAC | 6ns | |
| Random Access Time (Max) | tCE | 70ns | |
| Standby Current (Max) | IDDSI | 300 μA | |
| Power Down Current (Max) | IPS | 10 μA | |
Glossary
1. Fact Cycle RAM (FCRAM) FCRAM is Fujitsu's unique core technology that features high speed and low power consumption. Mobile FCRAM is pseudo static RAM, with an SRAM interface on a FCRAM core.
2. Common Specifications for Mobile RAM (COSMORAM) Common specifications for next-generation mobile pseudo SRAM user interface, which were announced by Fujitsu, NEC Electronics, and Toshiba on February 17, 2003. FCRAM is a trademark of Fujitsu Ltd. All other company/product names mentioned herein are trademarks or registered trademarks of their respective companies.
A low-resolution picture relevant to this press release can be found by following the link:http://www.fujitsu.com/downloads/MICRO/fma/imagelib/memory/lowres/MB82DBSO4314C.jpg
For a high-resolution download option please follow the link: http://www.fujitsu.com/downloads/MICRO/fma/imagelib/memory/highres/MB82DBS0413C.zip
About Fujitsu Microelectronics America, Inc.
Fujitsu Microelectronics America, Inc. (FMA) leads the industry in innovation. FMA provides high-quality, reliable semiconductor products and services for the networking, communications, automotive, security and other markets throughout North and South America. For product information, visit the company web site at http://us.fujitsu.com/micro
Press Contacts
Emi Igarashi
Fujitsu Microelectronics America, Inc.
Tel: 408.737.5647
E-mail:eigarash@fma.fujitsu.com
Dick Davies
IPRA Tel: 415.777.4161E-mail:ipra@mindspring.com
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