Fujitsu Microelectronics America, Inc.

Fujitsu and Toshiba Announce Second-Generation FCRAMTM with Enhanced Performance up to 200 Megahertz

Latest generation meets increasing demand for higher performance in networking and communications markets

Irvine and San Jose, CA, January 21, 2002 — Further demonstrating their leadership in high-performance DRAM technology, Fujitsu Microelectronics America, Inc. (FMA) and Toshiba America Electronic Components, Inc. (TAEC) today introduced second-generation Fast Cycle Random Access Memory (FCRAM)^TM for high-speed networking, network server and Internet server applications. This new generation of FCRAMs offers significant performance enhancements over the previous generation, achieving fast performance up to 200 megahertz (MHz), a random cycle time of 25 nanoseconds (ns) and bandwidth of 400 megabits per second (Mbps).

While this new generation of FCRAM devices has been co-developed by Fujitsu and Toshiba, the companies will independently manufacture and market their own product lines based on the new design. It is anticipated that the common specifications will enable them to act as secondary sources for each other, to ensure overall market penetration and provide a stable supply.

"This new FCRAM extends the trend toward specialty memory products that we think is a very important one," said Bob Merritt, senior industry analyst at Semico Research. "An increasing number of current and future applications require performance characteristics that commodity memories do not provide. This is especially true in the communications market. We see FCRAM as one of the early and exciting examples of this kind of specialty memory with the required performance."

FCRAM technology combines DRAM densities with random cycle performance approaching Static Random Access Memory (SRAM) speeds. The FCRAM architecture offers fast random access and cycle times, and high bandwidth combined with a conventional Double Data Rate (DDR) interface using more cost-effective DRAM technology. In contrast to these enhanced second-generation FCRAM devices, the first-generation FCRAMs offer a random cycle time of 30ns and a bandwidth of 308Mbps.

"Fujitsu and Toshiba worked on the original FCRAM development together, after Fujitsu created the very first FCRAM designs," said Keith Horn, vice president of marketing at FMA. "Now we are taking the technology to the next performance level. A rapidly growing number of customers in the networking and communications markets are adopting the FCRAM technology to support their advanced memory requirements. We are pleased to be working with Toshiba to deliver the performance these users require."

"FCRAM technology is ideal for meeting the high-performance needs of emerging applications in networking and communications, as demonstrated by the wide acceptance of the first generation of devices," said Brian Kumagai, manager of business development for DRAM products at TAEC. "However, the requirements of these dynamic markets are continuously expanding, dictating an evolution to even faster, higher performance FCRAM devices. Many early adopters of the first generation are anxiously awaiting the release of the faster second-generation devices for use in future applications."

The new devices, which are available in x8 and x16 configurations, were developed using advanced 0.175 micron process technology. They offer low latency and low power consumption of 2.5 volts by narrowing the memory active areas, and incorporate a proprietary core technology for achieving fast random access cycle times. For flexibility in meeting specific application requirements, FCRAMs are available with different functions including variable write length. The TSOP2 packaging offers a pin out and I/O interface compatible with standard DDR Synchronous Dynamic Random Access Memories (SDRAMs). Additional features include electrically selectable data input/output driver strength.

Pricing and Availability
Please contact each company directly for pricing and availability.

About FCRAM
Co-developed by Fujitsu and Toshiba, FCRAMs offer lower power consumption by narrowing the memory active areas and incorporate a proprietary core technology that achieves fast random access. The FCRAM solution excels in applications where DRAM densities with random cycle performance approaching SRAM speeds are needed.

FCRAMs offer designers many advantages including favorable cost versus performance. Incorporating FCRAM into the memory subsystem of a product also improves system performance, enabling more searches per second without major architectural changes in the traditional CPU and memory subsystem interfaces. The devices' fast cycle times enable them to find stored data more quickly, thus offering a superior alternative to engineers looking to replace content addressable memory.

---

About TAEC

TAEC offers the industry's broadest line-up of semiconductor, display and storage solutions for the computing, wireless, networking and digital consumer markets. Combining quality and flexibility with design engineering expertise, TAEC brings advanced next-generation technologies to its OEM customers. TAEC is an independent operating company owned by Toshiba America Inc., a subsidiary of the $47.9 billion (FY 2000 recorded sales) Toshiba, the second largest semiconductor company worldwide in terms of global sales for the year 2000. Toshiba is a world leader in high-technology products with more than 300 major subsidiaries and affiliates worldwide. For additional company and product information, please visit TAEC's web site at chips.toshiba.com. For technical inquiries, please e-mail Tech.Questions@taec.toshiba.com.

About Fujitsu Microelectronics America, Inc.

Fujitsu Microelectronics America (FMA) is a leading supplier of a broad range of semiconductors and electronics products. For product information, please call 1-800-866-8608 or visit the company website at a www.fma.fujitsu.com.

---

Press Contacts

---

FCRAM is a trademark of Fujitsu Limited, Japan.